Graphene sheet resistances well below 200 ohm/ sq sheet carrier concentrations above 5× 10 13 cm − 2, have been observed experimentally for n- doped graphene produced by the disclosed methods. 1 Quickly after its initial discovery, graphene was used to make electronic devices for a variety of applications. Inﬂuence of S and P Doping in a Graphene Sheet Fig. The graphene film can be formed prior to the graphene sheets being exposed to the one- electron oxidant solution. Graphene is a carbon based material that can be viewed as a one atom thick sheet of graphite and has been investigated intensely in recent years following a report by Novoselov et al. This invention provides n- doped graphene for various electronic- device applications. P doped graphene sheet. 67 m2 g- 1) and relatively high P- doping level ( 1.
of graphene oxide and 1- butyl- 3- methylimidazolium hexafluorophosphate under Ar atm. Education Background; B. < SUP> 2< / SUP> Because high. an acceptor state in graphene sheets. 81% of N were also synthesized in an attempt to increase the specific capacitance. According to our theoretical calculations tunable merely with a back gate electrode, this transistor has three separate magnetic states without the need of ferromagnetic contacts.
5 e, suggesting the stronger ability of N for electron donation. For example depositing a naturally p- type molecular island onto an n- doped graphene would form a p- n junction in a graphene sheet, so that the graphene sheet not covered in molecules remains n type while graphene covered with molecules is p type. In 1 M aqueous H 2 SO 4 6 M aqueous KOH, the P/ N- doped graphene featured a high specific capacitance of 271 F g − F g − 1 respectively. , one is n- type ( electron doped) and the other is p- type ( hole doped). The graphene sheets are exposed to a solution having a one- electron oxidant configured to dope the graphene sheets to increase a conductivity thereof, thereby increasing the overall conductivity of the film. The P‐ doped graphene oxide/ carbon. 21 e to the graphene sheet 148 and graphitic N transfers 0. Different combinations of doping involve the sites label in this ﬁgure ( top view). Hirshfeld population analyses show that P can transfer 0. Modification of graphene structure with hetero atoms can tremendously change the electronic properties with can enhance its performance in the diversity fields of applications [ 5]. We derive formulas for the voltage dependence of the current,. National Taiwan University, PhD. Graphene- based nanomaterials in biosystems.
Na Lu 1 Liqian Wang 2, , Chunhai Fan 2, 4, 5 ( * ), Min Lv 2, Zisheng Tang 3 6 ( * ). National Taiwan University, 1998 M. Although conventional p- type doping using small molecules on graphene decreases its sheet resistance ( R sh) it increases after exposure to ambient conditions, this problem has been considered. 21e to the graphene sheet,. P doped graphene sheet. Commonly used heteroatom namely S N, P B- doped graphene reported in the literature [ 6- 8]. % ) were successfully prepd.
Selected Journal Articles. Yiyi She, Jinfan Chen, Chengxu Zhang, Zhouguang Lu, Meng Ni, Patrick H. Leung, Nitrogen- doped graphene derived from. graphene p- n junction fabricated by local chemical doping of a graphene sheet. The photocurrent signal at the junction was found to be most prominent for gate voltages between the two Dirac points of the oppositely doped graphene regions.
p doped graphene sheet
The gate dependence of this signal agrees well. Synthesis, Structure and Properties of Boron and Nitrogen Doped Graphene.